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Plasmonic nanostructures exhibit intriguing optical properties due to spectrally selective plasmon resonance and thus have broad applications, including biochemical sensing and photoelectric detections. However, excited plasmons are often strongly influenced by the substrates supporting the metallic nanostructures, which not only weakens the intrinsic plasmon coupling effect, but also results in a great reduction of optical near‐field enhancement. Here, a plasmonic nanostructure combining collapsible Au‐nanofingers with selective‐etching that enables Au to be suspended is demonstrated, thus avoiding the undesirable influence of the substrates on the local near‐field distribution and forming symmetric electromagnetic‐field enhancements at both the top and bottom surfaces. The polymer support of the Au‐nanofingers is selectively etched by oxygen plasma, while the Au‐cap retains its original size. After an ultrathin dielectric coating is applied on the Au‐nanofingers, suspended Au‐caps with extremely small dielectric gaps are formed via the collapse of neighboring Au‐nanofingers by exposing them to ethanol. These nanostructures can provide a surface‐enhanced Raman scattering (SERS) enhancement of up to ≈10⁹, which is nearly twice that in the nonsuspended system. As a highly active SERS substrate, the label‐free detection of low‐concentration harmful plastic phthalates in a child's urine without any pretreatment is successfully demonstrated, which suggests that this method is suitable for medical prediagnosis.

Anisotropic photonic materials with linear dichroism are crucial components in many sensing, imaging, and communication applications. Such materials play an important role as polarizers, filters, and waveplates in photonic devices and circuits. Conventional crystalline materials with optical anisotropy typically show unidirectional linear dichroism over a broad wavelength range. The linear dichroism conversion phenomenon has not been observed in crystalline materials. The investigation of the unique linear dichroism conversion phenomenon in quasi‐1D hexagonal perovskite chalcogenide BaTiS₃is reported. This material shows a record level of optical anisotropy within the visible wavelength range. In contrast to conventional anisotropic optical materials, the linear dichroism polarity in BaTiS₃makes an orthogonal change at an optical wavelength corresponding to the photon energy of 1.78 eV. First‐principles calculations reveal that this anomalous linear dichroism conversion behavior originates from the different selection rules of the parallel energy bands in the BaTiS₃material. Wavelength‐dependent polarized Raman spectroscopy further confirms this phenomenon. Such a material, with linear dichroism conversion properties, could facilitate the sensing and control of the energy and polarization of light, and lead to novel photonic devices such as polarization‐wavelength selective detectors and lasers for multispectral imaging, sensing, and optical communication applications.

Light beams carrying orbital angular momentum (OAM) in the form of optical vortices have attracted great interest due to their capability for providing a new dimension and approach to manipulate light–matter interactions. Recently, plasmonics has offered efficient ways to focus vortex beams beyond the diffraction limit. However, unlike in the visible and near‐infrared regime, it is still a big challenge to realize plasmonic vortices at far‐infrared and even longer wavelengths. An effective strategy to create deep‐subwavelength near‐field electromagnetic (EM) vortices operating in the low frequency region is proposed. Taking advantage of the asymmetric spatial distribution of EM field supported by a metallic comb‐shaped waveguide, plasmonic vortex modes that are strongly confined in a well‐designed deep‐subwavelength meta‐particle with desired topological charges can be excited. Such unique phenomena are confirmed by the microwave experiments. An equivalent physical model backed up by the numerical simulations is performed to reveal the underlying mechanism of the plasmonic vortex generation. This spoof‐plasmon assisted focusing of EM waves with OAM may find potentials for functional integrated elements and devices operating in the microwave, terahertz, and even far‐infrared regions.

A strongly confined and enhanced electromagnetic (EM) field due to gap‐plasmon resonance offers a promising pathway for ultrasensitive molecular detections. However, the maximum enhanced portion of the EM field is commonly concentrated within the dielectric gap medium that is inaccessible to external substances, making it extremely challenging for achieving single‐molecular level detection sensitivity. Here, a new family of plasmonic nanostructure created through a unique process using nanoimprint lithography is introduced, which enables the precise tailoring of the gap plasmons to realize the enhanced field spilling to free space. The nanostructure features arrays of physically contacted nanofinger‐pairs with a 2 nm tetrahedral amorphous carbon (ta‐C) film as an ultrasmall dielectric gap. The high tunneling barrier offered by ta‐C film due to its low electron affinity makes an ultranarrow gap and high enhancement factor possible at the same time. Additionally, its high electric permittivity leads to field redistribution and an abrupt increase across the ta‐C/air boundary and thus extensive spill‐out of the coupled EM field from the gap region with field enhancement in free space of over 10³. The multitude of benefits deriving from the unique nanostructure hence allows extremely high detection sensitivity at the single‐molecular level to be realized as demonstrated through bianalyte surface‐enhanced Raman scattering measurement.

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary‐type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on‐state current and the switching voltage. Here, the formation of conductive filaments in a material medium with sub‐nanometer thickness formed through the oxidation of atomically thin two‐dimensional boron nitride is studied. The resulting memristive device exhibits sub‐nanometer filamentary switching with sub‐pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultralow energy devices are promising for realizing femtojoule and sub‐femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.